Interfacial doping in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>LaVO</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>SrVO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> multilayers from <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mtext>DFT</mml:mtext><mml:mo>+</mml:mo><mml:mtext>DMFT</mml:mtext></mml:math>

Interfacial effects on magnetic relaxation in CoÕPt multilayers

S. J. Yuan, L. Sun, H. Sang, J. Du, and S. M. Zhou* Surface Physics Laboratory (National Key Laboratory) and Department of Physics, Fudan University, Shanghai 200433, China Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China ~Received 19 April 2003; revised...

Interfacial Properties in Cu-phthalocyanine-based Hybrid Inorganic/Organic Multilayers

Interfacial properties of 5 nm MgO(001)/7 nm Fe(001)/1.8 nm MgO(001)/t nm Cu-phthalocyanine (CuPc) hybrid multilayers with t = 0, 1, 7, and 10 were investigated by using x-ray photoemission spectroscopy (XPS). Rather sharp interfacial properties were observed in the CuPc films grown on an epitaxial MgO/Fe/MgO(001) trilayer than a MgO/Fe(001) bilayer. This work suggests a new way to improve devi...

Enhanced interfacial magnetic coupling of Gd /Fe multilayers.

The spatial extent zeta(AFM) and strength J(AFM) of the antiferromagnetic (AFM) exchange coupling at buried Gd /Fe interfaces in ferrimagnetic [Gd(50 A)Fe(15,35 A)](15) sputtered multilayers is obtained from combined x-ray resonance magnetic reflectivity and magnetic circular dichroism measurements. zeta(AFM) is 4.1(7) A or approximately 1-2 interatomic distances in bulk Gd and Fe; J(AFM) is 10...

Effect of interfacial microstructure on magnetic properties of dysprosium multilayers

Interfacial nondegenerate doping of MoS2 and other two-dimensional semiconductors.

Controlled nondegenerate doping of two-dimensional semiconductors (2DSs) with their ultraconfined carriers, high quantum capacitance, and surface-sensitive electronics can enable tuning their Fermi levels for rational device design. However, doping techniques for three-dimensional semiconductors, such as ion implantation, cannot be directly applied to 2DSs because they inflict high defect densi...